MAAP-000080-DIE000

www.DataSheet4U.com Amplifier, Power, 1 W 2-18 GHz Features ♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage (6-10V) Operation ® ♦ MSAG Process MAAP-000080-DIE000 Rev Preliminary Datasheet Description The MAAP-000080-DIE000 is a 2-stage 1 W distributed power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications ♦ Electronic Warfare ♦ Ultra Wideband (UWB) ♦ Test Instrumentation Also Available in: Description Part Number Plastic MAAP-000080-PKG003 Sample Board (Die) MAAP-000080-SMB004 SAMPLES Mechanical Sample (Die) MAAP-000080-MCH000 Electrical Characteristics: TB = 10°C1, Z0 = 50Ω, VDD = 10V, IDQ = 750mA2, Pin = 22 dBm, RG = 130Ω Paramete...