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Amplifier, Power, 1 W 2-18 GHz
Features
♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Volt...
www.DataSheet4U.com
Amplifier, Power, 1 W 2-18 GHz
Features
♦ 1 Watt Saturated Output Power Level ♦ Variable Drain Voltage (6-10V) Operation ® ♦ MSAG Process
MAAP-000080-DIE000
Rev Preliminary Datasheet
Description
The MAAP-000080-DIE000 is a 2-stage 1 W distributed power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted
transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging.
Primary Applications
♦ Electronic Warfare ♦ Ultra Wideband (UWB) ♦ Test Instrumentation
Also Available in:
Description Part Number Plastic MAAP-000080-PKG003 Sample Board (Die) MAAP-000080-SMB004
SAMPLES
Mechanical Sample (Die) MAAP-000080-MCH000
Electrical Characteristics: TB = 10°C1, Z0 = 50Ω, VDD = 10V, IDQ = 750mA2, Pin = 22 dBm, RG = 130Ω
Paramete...