BA01232

www.DataSheet4U.com MITSUBISHI SEMICONDUCTOR Preliminary Specifications are subject to change without notice. BA01232 HBT HYBRID IC OUTLINE DRAWING Unit : millimeters DESCRIPTION The BA01232 is GaAs RF amplifier designed for W-CDMA hand-held phone. ‡@ FEATURES Low voltage Vcc=3.5V High power Po=26.5dBm @1920∼1980MHz High gain Gp=27.5dB @Po=26.5dBm 2stage amplifier Internal input and output matching Small size package 4x4x1.2mm ‡E ‡D ‡C 4.00 1.40 1.2 ‡@ Pin ‡C Pout ‡A Vc1 ‡D Vcb ‡B Vc2 ‡E Vref 4.00 ‡A ‡B APPLICATION W-CDMA(UTRA/FDD) mobile transmitter (UE Power Class 3). ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Vcc Pin Tc(op) Tstg Parameter Supply voltage of HPA Input power Operating case temp. Storage temp. ZG=ZL=50Ω Condition Ratings* 6 7 -20 ∼ +85 -30 ∼ +95 Unit V dBm °C °C *Note : Each maximum rating is guaranteed independently . ELECTRICAL CHARACTERISTICS(Ta=25°C) Symbol f Icqt Ict PAE Pin ρin ACLR 2Sp/3Sp RX noise **NOTE Parameter Frequency Idle current Total current Power added efficiency Input Power Return loss Adjacent channel leakage power at 5MHz Adjacent channel leakage power at 10MHz 2nd/3rd harmonics RX band noise Test conditions** MIN 1920 No RF input Limits TYP 35 252 50 -1.0 -6 -41 -54 -38 -48 -30 -140 MAX 1980 Unit MHz mA mA % dBm dB dBc dBc dBc dBm/Hz Po=26.5dBm Vc1=Vc2=3.5V Vref=2.9V Vcb=2.9V : ZG=ZL=50Ω 3.84Mcps spreading, HPSK. Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable...