(SKKH213 / SKKH253) Thyristor / Diode Modules
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VRSM VRRM (dv/ VDRM dt)cr V 900 V 800 V/µs 500
ITRMS (maximum values for continuous operation) 370...
Description
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VRSM VRRM (dv/ VDRM dt)cr V 900 V 800 V/µs 500
ITRMS (maximum values for continuous operation) 370 A 230 A SKKT 213/08 D 213/12 E 213/14 E 213/16 E 213/18 E 213/20 E 213/22 E 420 A 253 A SKKT 253/08 D 253/12 E 253/14 E 253/16 E 253/18 E – – 370 A 230 A SKKH – 213/12 E 213/14 E 213/16 E 213/18 E 213/20 E 213/22 E 420 A 250 A SKKH 253/08 D 253/12 E 253/14 E 253/16 E 253/18 E – – ITAV (sin. 180; Tcase = 85 °C)
SEMIPACK® 3 Thyristor / Diode Modules SKKT 213 SKKT 253 SKKH 213 SKKH 253
1300 1200 1000 1500 1400 1000 1700 1600 1000 1900 1800 1000 2100 2000 1000 2300 2200 1000
Symbol Conditions
ITAV ID IRMS ITSM i 2t tgd tgr (di/dt)cr tq IH IL VT VT(TO) rT IDD; IRD VGT IGT VGD IGD Rthjc sin. 180; (Tcase = ...) B2/B6 Tamb = 35 °C W1/W3 P 16/200 F Tvj = 25 °C; 10 ms Tvj = 130 °C; 10 ms Tvj = 25 °C; 8,3 ... 10 ms Tvj = 130 °C; 8,3 ... 10 ms Tvj = 25 °C; IG = 1 A diG/dt = 1 A/µs VD = 0,67 . VDRM Tvj = 130 °C Tvj = 130 °C Tvj = 25 °C; typ. / max. Tvj = 25 °C; RG = 33 Ω; typ. / max. Tvj = 25 °C; IT = 750 A Tvj = 130 °C Tvj = 130 °C Tvj = 130 °C; VRD = VRRM VDD = VDRM Tvj = 25 °C; d.c. Tvj = 25 °C; d.c. Tvj = 130 °C; d.c. Tvj = 130 °C; d.c. cont. sin. 180 rec. 120 per thyristor / per module
SKKT 213 SKKT 253 SKKH 213 SKKT 253
213 (90°C) 354/456 425/3 x 360 8 500 7 500 361 000 281 000 1 2 250 typ. 50 ... 150 150 / 500 0,3 / 2 max. 1,9 0,95 1,3 50 3 200 0,25 10 0,11 / 0,055 0,115 / 0,057 0,125 / 0,0625 0,08 / 0,04 – 40 ... + 130 3600 / 3000 5 (44 lb. in.) + 15 %1) 9 (...
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