MA4SPS422

www.DataSheet4U.com SURMOUNTTM PIN Diodes MA4SPS421, MA4SPS422 Features Surface Mount 100 µm I-Region Length Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch Protection Low Parasitic Capacitance and Inductance Higher Average and Peak Power Handling MA4SPS420 Series V2 Absolute Maximum Ratings1 @ TA = +25 °C (unless otherwise specified) Parameter Forward Current Reverse Voltage Operating Temperature Absolute Maximum 250 mA l -200 V l -55 °C to +125 °C -55 °C to +150 °C +175 °C 1.8 W +235 °C for 10 seconds Description and Applications This device is a Silicon-Glass PIN diode chip fabricated with M/A-COM’s patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This Vertical Topology provides for Exceptional Heat Transfer. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. These packageless devices are suitable for usage in Moderate Incident Power ( 10 W C.W. ) or Higher Incident Peak Power ( 500 W ) Series, Shunt, or Series...