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MA4SPS420 Dataheets PDF



Part Number MA4SPS420
Manufacturers Tyco Electronics
Logo Tyco Electronics
Description (MA4SPS420 Series) SURMOUNT PIN Diodes
Datasheet MA4SPS420 DatasheetMA4SPS420 Datasheet (PDF)

www.DataSheet4U.com SURMOUNTTM PIN Diodes MA4SPS421, MA4SPS422 Features • • • • • • • Surface Mount 100 µm I-Region Length Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch Protection Low Parasitic Capacitance and Inductance Higher Average and Peak Power Handling MA4SPS420 Series V2 Absolute Maximum Ratings1 @ TA = +25 °C (unless otherwise specified) Parameter Forward Current Reverse Voltage Operating Temperature Absolute Maximum 250 mA .

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www.DataSheet4U.com SURMOUNTTM PIN Diodes MA4SPS421, MA4SPS422 Features • • • • • • • Surface Mount 100 µm I-Region Length Device No Wirebonds Required Rugged Silicon-Glass Construction Silicon Nitride Passivation Polymer Scratch Protection Low Parasitic Capacitance and Inductance Higher Average and Peak Power Handling MA4SPS420 Series V2 Absolute Maximum Ratings1 @ TA = +25 °C (unless otherwise specified) Parameter Forward Current Reverse Voltage Operating Temperature Absolute Maximum 250 mA l -200 V l -55 °C to +125 °C -55 °C to +150 °C +175 °C 1.8 W +235 °C for 10 seconds Description and Applications This device is a Silicon-Glass PIN diode chip fabricated with M/A-COM’s patented HMICTM process. This device features two silicon pedestals embedded in a low loss, low dispersion glass. The diode is formed on the top of one pedestal and connections to the backside of the device are facilitated by making the pedestal sidewalls electrically conductive. Selective backside metallization is applied producing a surface mount device. This Vertical Topology provides for Exceptional Heat Transfer. The topside is fully encapsulated with silicon nitride and has an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and the anode air-bridge during handling and assembly. These packageless devices are suitable for usage in Moderate Incident Power ( 10 W C.W. ) or Higher Incident Peak Power ( 500 W ) Series, Shunt, or Series-Shunt Switches. Smaller Parasitic Inductance, 0.1to 0.2 nH, and Excellent RC Constant ( 0.45 pS ), make the devices ideal for Higher Frequency Switch Elements compared to their Plastic Device Counterparts. Storage Temperature Junction Temperature Dissipated Power (RF & DC) Mounting Temperature 1. Operation of this device above any one of these parameters may cause permanent damage. Case Style ODS-1294 (MA4SPS421) Case Style ODS-1295 (MA4SPS422) B A C A C Dimensions Dim A B C D E F G Min. 0.040 0.021 0.004 0.013 0.011 0.013 0.019 Inches Max. 0.042 0.023 0.008 0.015 0.013 0.015 0.021 Millimeters Min. 1.025 0.525 0.102 0.325 0.275 0.325 0.475 Max. 1.075 0.575 0.203 0.375 0.325 0.375 0.525 1. Backside metal: 0.1 microns thick. 2. Shaded Areas Indicate Backside Ohmic Gold Contacts. 3. Both Devices have Same Outline Dimensions ( A to G ). D E F G G D E F Bottom Side Contacts are Circuit Side 1 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. SURMOUNTTM PIN Diodes MA4SPS421, MA4SPS422 Electrical Specifications @ + 25 °C Parameter Symbol Conditions Units Min. Typ. MA4SPS421 Capacitance Capacitance Capacitance Capacitance Resistance Forward Voltage Reverse Leakage Current Input Third Order Intercept Point CT CT CT CT RS VF IR IIP3 0 V, 1 MHz 1 MA4SPS420 Series V2 Max. Min. Typ. MA4SPS422 Max pF pF pF pF Ω V µA dBm 0.130 .08 0.090 .07 6.2 0.900 0.175 0.340 0.14 0.500 0 V, 1 GHz1,3 -40 Volts, 1 MHz1 -40 Volts, 1 GHz +10 mA, 1 GHz +10 mA l -200 V l F 1 = 1000 MHz F 2 = 1010 MHz Input Power = +10 dBm I bias = +10 mA IH = 0.5 A, IL = 10 mA +10 mA / -6 mA (50% - 90% V) 1,3 0.125 0.180 0.13 3.1 0.300 2,3 0.950 l -10 l 0.840 0.900 l -10 l +50 +50 C.W. Thermal Resistance Minority Carrier Lifetime RθJL TL °C/W µs 80 5 70 10 1. Total capacitance, CT, is equivalent to the sum of Junction Capacitance ,Cj, and Parasitic Capacitance, Cpar. 2. Series resistance Rs is equivalent to the total diode resistance : Rs = Rj ( Junction Resistance) + Rc ( Ohmic Resistance) 3. Rs and CT are measured on an HP4291A Impedance Analyzer with die mounted in an ODS-186 package with Sn 60 / Pb 40 solder. 4. Steady-state R θJL measured with die mounted in an ODS-186 package with Sn 60 / Pb 40 solder. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. SURMOUNTTM PIN Diodes MA4SPS421, MA4SPS422 Handling MA4SPS420 Series V2 All s.


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