HAT3021R

HAT3010R Silicon N / P Channel Power MOS FET High Speed Power Switching Features Low on-resistance Capable of 4.5 V gate drive High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8 ) 78 DD 87 65 1234 2 4 G G S1 Nch 56 DD S3 Pch REJ03G1199-1000 (Previous: ADE-208-1402H) Rev.10.00 Sep 07, 2005 1, 3 2, 4 5, 6, 7, 8 Source Gate Drain Rev.10.00 Sep 07, 2005 page 1 of 9 HAT3010R Absolute Maximum Ratings Item Symbol Value Nch Pch Drain to source voltage Gate to source voltage VDSS VGSS 60 –60 ±20 ±20 Drain current Drain peak current ID 6 ID (pulse) Note 1 48 –5 –40 Body-drain diode reverse drain current Channel dissipation Channel dissipation IDR 6 –5 Pch Note 2 2 2 Pch Note 3 3 3 Channel temperature Tch 150 150 Storage temperature Tstg –55 to +150 –55 to +150 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s 3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s (Ta = 25°C) Unit V V A A A W W °C °C Electrical Characteristics N Channel Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay ti...