Amplifier, Power, 20W 7.5-10.5 GHz
Features
♦ ♦ ♦ ♦ ♦
MAAPGM0079-DIE
Rev A Preliminary Datasheet
17 Watt Saturated Out...
Amplifier, Power, 20W 7.5-10.5 GHz
Features
♦ ♦ ♦ ♦ ♦
MAAPGM0079-DIE
Rev A Preliminary Datasheet
17 Watt Saturated Output Power Level 20 Watt Saturated Output Power Level over 8-10 GHz Band Variable Drain Voltage (8-10V) Operation MSAG™ Process Robust Stability
Description
The MAAPGM0079-DIE is a 3 stage 20W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAG)Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG process features robust silicon-like manufacturing processes, planar processing of ion implanted
transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging.
Primary Applications
♦ SatCom ♦ Commercial Avionics ♦ Radar
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Description Part Number Ceramic Package MAAP-000079-PKG001 Sample Board (Die) MAAP-000079-SMB004 Sample Board (Pkg) MAAP-000079-SMB001 Mechanical Sample (Die) MAAP-000079-MCH000
Electrical Characteristics: T B = 40...