MA4E2513-1289

SURMOUNTTM Low Barrier Tee “0301” Footprint Silicon Schottky Diodes Features Extremely Low Parasitic Capitance and Inductance Extremely Small “0301” (1000 x 300um) Footprint Surface Mountable in Microwave Circuits, No Wirebonds Required Rugged HMIC Construction with Polyimide Scratch Protection Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours) Lower Susceptibility to ESD Damage MA4E2513-1289 Series V1 The MA4E2513L-1289 SurMount Low Barrier Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding Surmount diode, which can be connected to a hard or soft substrate circuit with solder. Description and Applications The MA4E2513L-1289 SurMount™ Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power www.DataSheet4U.com dissipation characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choices for circuit...