MA4E2508

SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required Rugged HMIC Construction with Polyimide Scratch Protection Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours) Lower Susceptibility to ESD Damage MA4E2508 Series V2 The MA4E2508 Family of SurMount Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding Surmount diode, which can be connected to a hard or soft substrate circuit with solder. Case Style 1112 A Description and Applications The MA4E2508 SurMount™ Anti-Parallel Diode Series are Silicon Low, Medium & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have www.DataSheet4U.com excellent loss and power dissipation characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choice...