WT-2307

WT-2307 Surface Mount P-Channel Enhancement Mode MOSFET 1 3 DRAIN DRAIN CURRENT - 3 AMPERES DRAIN SOURCE V OLTAGE - 20 VOLTAGE 2 SOURCE Features: *Super high dense cell design for low RDS(ON) R DS(ON) <80 mΩ @VGS =-4.5V R DS(ON) <100 m Ω@V GS =-2.5V *Rugged and Reliable *SOT-23 Package GATE 3 1 2 SOT-23 www.DataSheet4U.com Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value -20 Unite V V A A A W C/W C +12 -3 -11 -1.25 1.25 100 -55 to 150 Device Marking WT2307=S07 WEITRON http://www.weitron.com.tw WT-2307 Electrical Characteristics Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ Max Unit Static (2) Drain-Source Breakdown Voltage VGS=0V, ID=-250 uA Gate-Source Threshold Voltage VDS=VGS, ID=-250 uA Gate-Source Leakage Current +10V VDS=0V, VGS=Zero Gate Voltage Drain Current VDS=-16V, VGS=0V Drain-Source On-Resistance VGS=-4.5V, ID=-4.0A VGS=-2.5V, ID=-2.0A On-State Drain Current VDS=-5V, VGS=-4.5A Forward Transconductance VDS=-5V, ID=-5A -20 -0.5 -0.8 -1.5 +100 1 80 100 V V nA uA mΩ -15 4 rDS (on) 70 85 ID(on) gfs - - A S Dynamic (3) Input Capacitance VDS=-15V, VGS=0V, f=1MHZ Output Capacitance VDS=-15V, VGS=0V, f=1...