Document
HUR60100, HUR60120
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Dimensions TO-247AC A C(TAB) C A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 VRRM V 1000 1200 A C
Dim. A B C D E F G H J K L M N
Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49
Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
HUR60100 HUR60120
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Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical
Test Conditions TC=90oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=14.5A; L=180uH VA=1.25.VR typ.; f=10kHz; repetitive
o
Maximum Ratings 70 60 500 23 1.5 -55...+175 175 -55...+150 230 0.8...1.2 6
Unit A A mJ A
o
C
W Nm g
HUR60100, HUR60120
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Symbol TVJ=25oC; VR=VRRM TVJ=150oC; VR=VRRM IF=60A; TVJ=150oC TVJ=25oC
Test Conditions
Characteristic Values typ. max. 650 2.5 1.74 2.66 0.65 0.25
Unit uA mA V K/W ns
IR VF RthJC RthCH trr IRM
IF=1A; -di/dt=300A/us; VR=30V; TVJ=25oC VR=100V; IF=130A; -diF/dt=100A/us; TVJ=100 C
o
40 7 14.3
A
FEATURES
* International standard package * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour
APPLICATIONS
* Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders
ADVANTAGES
* Avalanche voltage rated for reliable operation * Soft reverse recovery for low EMI/RFI * Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
HUR60100, HUR60120
High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
100 A 80 IF 60
TVJ=150°C TVJ=100°C TVJ= 25°C
10 C Qr 8
TVJ= 100°C VR = 600V
100 A 80 IRM
TVJ= 100°C VR = 600V
6
IF= 120A IF= 60A IF= 30A
60
40
4
40
IF= 120A IF= 60A IF= 30A
20
2
20
0 0 1 2 VF V 3
0 100
0 A/us 1000 -diF/dt 0 200 400 600 A/us 800 1000 -diF/dt
Fig. 1 Forward current IF versus VF
Fig. 2 Reverse recovery charge Qr versus -diF/dt
280 ns
TVJ= 100°C VR = 600V
Fig. 3 Peak reverse current IRM versus -diF/dt
120 V
TVJ= 100°C IF = 60A
2.0
1.2 us
tfr VFR
1.5 Kf 1.0
IRM
trr 240
IF= 120A IF= 60A IF= 30A
VFR 80
tfr 0.8
200 0.5
Qr
40
0.4
0.0 0 40 80 120 °C 160 TVJ
160 0 200 400 600 -diF/dt 800 1000 A/us
0 0 200 400
0.0 600 A/us 800 1000 diF/dt
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
1 K/W ZthJC
Fig. 5 Recovery time trr versus -diF/dt
Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.324 0.125 0.201 ti (s) 0.0052 0.0003 0.038
0.1
0.01 0.0001
0.001
0.01
0.1
1 t
s
10
Fig. 7 Transient thermal resistance junction to case
.