MA4AGSW900-287T

AIGaAs PIN Diode High Isolation SPST Switch V 1.00 MA4AGSW900-287T Features n n n n SOT-23 Package Outline (Topview) GND 31 dB Isolation @ 0 Volts @ 3 GHz 0.8 dB Loss @ 10 mA @ 3 GHz < 10 nS Switching Speed Useable from 50 MHz to 6.0 GHz Description M/A-COM's MA4AGSW900-287T is a Gallium Arsenide SPST PIN Diode Switch that makes use of Series Diodes featuring Lower Loss, Higher Isolation and Faster Switching Speed. This device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The switch die is fully passivated with silicon nitride and has an additional layer of a polymer for scratch and impact protection. This protective polymer coating provides additional moisture protection to the SOT-23 assembly. J1 J2 Absolute Maximum Ratings1 Parameter Operating Temperature Storage Temperature Dissipated RF & DC Power Incident RF Power Mounting Temperature Value -65 °C to +125 °C -65 °C to +150 °C 50 mW +20 dBm C.W. +235 °C for 10 seconds Applications The small 20 fF capacitance, and the low 3.0 Ω “ ON “ resistance of the GaAs PIN diodes allow for higher isolation at zero volt bias and lower insertion loss vs. comparable SPST switches. This switch is designed for use in applications requiring improved RF performance, simple D.C. Bias, and small device size. www.DataSheet4U.com 1. Exceeding any of these values may result in permanent damage Electrical Specifications @ TA = 25 °C Parameter and Test Conditi...