HI31C

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9001 Issued Date : 1996.02.28 Revised Date : 2002.03.04 Page No. : 1/3 HI31C NPN EPITAXIAL PLANAR TRANSISTOR Description The HI31C is designed for use in general purpose amplifier and switching applications. Absolute Maximum Ratings (Ta=25°C) TO-251 Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ..................................................................................... 15 W Maximum Voltages and Currents BVCBO Collector to Base Voltage..................................................................................... 100 V BVCEO Collector to Emitter Voltage.................................................................................. 100 V BVEBO Emitter to Base Voltage............................................................................................ 5 V IC Collector Current .............................................................................................................. 3 A www.DataSheet4U.com Characteristics (Ta=25°C) Symbol BVCBO BVCEO ICES ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Min. 100 100 25 10 3 Typ. Max. 20 50 1 1.2 1.8 50 Unit V V uA uA mA V V Test Conditions IC=1mA, IE=0 IC=30...