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CDBUR70 Dataheets PDF



Part Number CDBUR70
Manufacturers Comchip Technology
Logo Comchip Technology
Description SMD Schottky Barrier Diode
Datasheet CDBUR70 DatasheetCDBUR70 Datasheet (PDF)

SMD Schottky Barrier Diode SMD Diodes Specialist CDBUR70(RoHs Device) Io = 70 mA V R = 70 Volts Features Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.039(1.00) 0.031(0.80) 0603(1608) 0.071(1.80) 0.063(1.60) Mechanical data Case: 0603(1608) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.003 gra.

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SMD Schottky Barrier Diode SMD Diodes Specialist CDBUR70(RoHs Device) Io = 70 mA V R = 70 Volts Features Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. 0.039(1.00) 0.031(0.80) 0603(1608) 0.071(1.80) 0.063(1.60) Mechanical data Case: 0603(1608) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Polarity: Indicated by cathode band. Mounting position: Any Weight: 0.003 gram(approx.). 0.028(0.70) Typ. 0.018(0.45) Typ. 0.033(0.85) 0.027(0.70) Dimensions in inches and (millimeter) www.DataSheet4U.com Maximum Rating (at T A =25 C unless otherwise noted) O Parameter Peak reverse voltage Reverse voltage RMS reverse voltage Average forward rectified current Forward current,surge peak Power dissipation Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit V RM VR V R(RMS) IO 70 70 49 70 0.1 150 -65 +125 +125 V V V mA A mW O 8.3 ms single half sine-wave superimposed on rate load(JEDEC method) I FSM PD T STG Tj C C O Electrical Characteristics (at T A =25 C unless otherwise noted) O Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time I F = 1mA I F = 15mA V R = 50V Conditions Symbol Min Typ Max Unit VF IR CT T rr 0.41 1 0.1 2 5 V uA pF nS f = 1 MHz, and 0 VDC reverse voltage I F =I R =10mA,Irr=0.1xIR,RL=100 Ohm REV:A QW-A1086 Page 1 SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBUR70) Fig. 1 - Forward characteristics 100 C O Fig. 2 - Reverse characteristics 100u O 12 5 75 C 25 C O Forward current (mA ) Reverse current ( A ) 0 C O - 40 C O 10u 125 C O 10 1u 75 C O 100n 25 C O 1 10n 0 C O 1n -40 C O 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1n 0 10 20 30 40 50 60 70 Forward voltage (V) Reverse voltage (V) Fig.3 - Capacitance between terminals characteristics Capacitance between terminals ( P F) 2.0 120 Fig.4 - Current derating curve Average forward current(%) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15 20 f=1MHz O T A =25 C Mounting on glass epoxy PCBs 100 80 60 40 20 0 25 30 35 40 0 25 50 75 100 O 125 150 Reverse voltage (V) Ambient temperature ( C) REV:A QW-A1086 Page 2 .


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