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CDBU0230-N

Comchip Technology

SMD Schottky Barrier Diode

SMD Schottky Barrier Diode SMD Diodes Specialist CDBU0230-N (Lead-free Device) Io = 200 mA V R = 30 Volt s Features Des...


Comchip Technology

CDBU0230-N

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Description
SMD Schottky Barrier Diode SMD Diodes Specialist CDBU0230-N (Lead-free Device) Io = 200 mA V R = 30 Volt s Features Designed for mounting on small surface. Extremely thin/leadless package. Low drop-down voltage. Majority carrier conduction. 0.035(0.90) 0.029(0.75) 0603(1608) 0.071(1.80) 0.063(1.60) Mechanical data Case: 0603 (1608) Standard package , molded plastic. 0.014(0.35) Typ. 0.033(0.85) 0.027(0.70) Terminals: Gold plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band 0.012 (0.30) Typ. Mounting position: Any. 0.028(0.70) Typ. www.DataSheet4U.com Weight: 0.003 gram (approx.). Dimensions in inches and (millimeter) Maximum Rating (at TA =25 C unless otherwise noted) O Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current,surge peak Power Dissipation Storage temperature Junction temperature Conditions Symbol Min Typ Max Unit V RRM VR IO 35 30 200 V V mA 8.3ms single half sine-wave superimposed on rate load(JEDEC method) I FSM PD T STG Tj -40 2000 150 +125 +125 mA mW O C C O Electrical Characteristics (at TA =25 C unless otherwise noted) O Parameter Forward voltage Reverse current Capacitance between terminals V R = 30 V Conditions I F = 200 mA DC Symbol Min Typ Max Unit VF IR CT 9 0.50 30 V uA PF f = 1 MH Z ,and 10VDC reverse voltage REV:B QW-A1050 Page 1 SMD Schottky Barrier Diode SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CDBU0230-N) Fig. 1 - Forward chara...




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