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MSG36E41

Panasonic Semiconductor
Part Number MSG36E41
Manufacturer Panasonic Semiconductor
Description SiGe HBT type
Published Jul 16, 2007
Detailed Description Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier ■ Features • Compatible between high breakdown voltage an...
Datasheet PDF File MSG36E41 PDF File

MSG36E41
MSG36E41

Overview
Transistors MSG36E41 SiGe HBT type For low-noise RF amplifier ■ Features • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Two elements incorporated into one package (Each transistor is separated) • Reduction of the mounting area and assembly cost by one half 0.
12+0.
03 -0.
02 6 5 4 Unit: mm 0.
80±0.
05 1.
00±0.
04 0 to 0.
02 • MSG33004 + MSG33001 (0.
35) (0.
35) 1.
00±0.
05 ■ Absolute Maximum Ratings Ta = 25°C Parameter Tr1 Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Tr2 www.
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com Display at No.
1 lead VCBO VCEO VEBO IC VCBO VCEO VEBO IC...


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