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2SJ605

NEC
Part Number 2SJ605
Manufacturer NEC
Description MOS FIELD EFFECT TRANSISTOR
Published Jul 12, 2007
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ605 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605...
Datasheet PDF File 2SJ605 PDF File

2SJ605
2SJ605

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ605 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION PART NUMBER 2SJ605 2SJ605-S 2SJ605-ZJ 2SJ605-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX.
(VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX.
(VGS = –4.
0 V, ID = –33 A) • Low input capacitance ! Ciss = 4600 pF TYP.
(VDS = –10 V, VGS = 0 A) • Built-in gate protection diode Note TO-220SMD package is produced only in Japan.
(TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS ...


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