2SJ600

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ600 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ600 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ600 PACKAGE TO-251 TO-252 FEATURES Low on-state resistance: RDS(on)1 = 50 mΩ MAX. (VGS = –10 V, ID = –13 A) RDS(on)2 = 79 mΩ MAX. (VGS = –4.0 V, ID = –13 A) Low Ciss: Ciss = 1900 pF TYP. Built-in gate protection diode TO-251/TO-252 package 2SJ600-Z ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) www.DataSheet4U.com (TO-251) –60 + 20 + 25 + 70 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg V V A A W W °C °C A mJ (TO-252) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 45 1.0 150 –55 to +150 –25 62.5 IAS EAS Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. Starting Tch = 25°C, RG = 25 Ω, VGS = –20 V ¡ 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14645EJ1V0DS00 (1st edition) Date Published November 2000 NS CP(K) Printed in Japan ...