MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
(a) 0.2+/-0.05 0.65+/-...
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD05MMP1
(a) 0.2+/-0.05 0.65+/-0.2 (c) (b) 7.0+/-0.2 (b) 8.0+/-0.2 6.2+/-0.2 4.2+/-0.2 5.6+/-0.2
RoHS Compliance, Silicon MOSFET Power
Transistor, 941MHz, 5.5W DESCRIPTION
RD05MMP1 is a MOS FET type
transistor specifically designed for UHF RF power amplifiers applications.
(3.6)
OUTLINE DRAWING
(d)
FEATURES
High power gain: Pout>5.5W, Gp>8.9dB@Vdd=7.2V,f=941MHz High Efficiency: 43%min. (941MHz) No gate protection diode
INDEX MARK [Gate]
(4.5)
0.95+/-0.2
2.6+/-0.2
TOP VIEW
DETAIL A
SIDE VIEW
1.8+/-0.1
BOTTOM VIEW
Terminal No. (a)Drain [output] (b)Source [GND] (c)Gate [input] (d)Source
APPLICATION
For output stage of high power amplifiers in 941MHz band mobile radio sets.
SIDE VIEW
Standoff = max 0.05
0.7+/-0.1
UNIT:mm DETAIL A NOTES: 1. ( ) Typical value
RoHS COMPLIANT
RD05MMP1 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking. This product includes the lead in high melting temperature type solders. However, it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)
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ABSOLUTE MAXIMUM RATINGS
(Tc=25°C UNLESS OTHERWISE NOTED)
SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input Power Drain Current Junction Temperature Storag...
