SMPS MOSFET
PD - 95555A
SMPS MOSFET
IRLR3715PbF IRLU3715PbF
HEXFET® Power MOSFET
Applications l High Frequency Isolated DC-DC Con...
Description
PD - 95555A
SMPS MOSFET
IRLR3715PbF IRLU3715PbF
HEXFET® Power MOSFET
Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalanche Voltage and Current
l
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VDSS
20V
RDS(on) max
14mΩ
ID
54A
D-Pak IRLR3715
I-Pak IRLU3715
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 25°C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation
Linear Derating Factor Junction and Storage Temperature Range
Max.
20 ± 20 54 38 210 71 3.8 0.48 -55 to + 175
Units
V V A W W W/°C °C
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
––– ––– –––
Max.
2.1 110 50
Units
°C/W
Notes through
are on page 10
www.irf.com
1
12/6/04
IRLR/U3715PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate...
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