STT1NF100

STT1NF100 N-CHANNEL 100V - 0.7Ω - 1A SOT23-6L STripFET™ II POWER MOSFET PRELIMINARY DATA TYPE STT1NF100 s s s VDSS 100V RDS(on) <0.8Ω ID 1A TYPICAL RDS(on) = 0.7Ω EXCEPTIONAL dv/dt CAPABILITY VERY LOW Qg SOT23-6L DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM www.DataSheet4U.com APPLICATIONS s DC-DC & DC-AC CONVERTERS s DC MOTOR CONTROL (DISK DRIVES, etc.) s SYNCHRONOUS RECTIFICATION s MARKING STQ0 ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 100 100 ± 20 1 0.6 4 1.6 0.013 20 – 55 to 150 (1) ISD ≤1A, di/dt ≤350A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. Unit V V V A A A W W/°C V/ns °C (q ) Pulse width limited by safe operating area September 2002 1/6 STT1NF100 THERMAL DATA Rthj-amb(*) Tl Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 78 260 °C/W °C (*)...