ML792E32

MITSUBISHI LASER DIODES ML7xx32 SERIES Notice: Some parametric limits are subject to change 10Gbps InGaAsP DFB LASER DIODE TYPE NAME ML792E32/ML792H32 APPLICATION 10Gbps Ethernet/Short Reach DESCRIPTION ML7xx32 series are uncooled DFB (Distributed Feedback) laser diodes for 10Gbps transmission emitting light beam at 1310nm. λ /4 phase shifted grating structure is employed to obtain excellent SMSR performance under 10Gbps modulation. Furthermore, ML7xx32 is able to operate in the wide temperature range from 0 oC to 85 oC without temperature control. ***S pecification Note Type ML792E32-01 ML792H32-01 Matching Resistance :Rs 42 ± 1 ohm FEATURES λ /4 phase shifted grating structure Wide temperature range operation ( 0 oC to 85 oC ) High side-mode-suppression-ratio (typical 45dB) High resonance frequency (typical 15GHz) Chip-on-carrier www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS Symbol If VRL Tc Tstg P arameter Laser forward current Laser reverse voltage Operation temperature Storage temperature Conditions Ratings 120 2 0 ~ +85 -40 ~+100 Unit mA V o C C o ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25 C) o Symbol Ith Iop Vop η λp SMSR θ θ⊥ fr tr tf P arameter Threshold current Operation current Operating voltage Slope efficiency P eak wavelength Side mode suppression ratio Beam divergence angle (parallel) Resonance frequency Rise time(20%-80%) Fall time(20%-80%) CW Conditions Min. 0.20 1290 35 - Limits Typ. 9 30 30 70 1.1 0.25 1310 45 25 30 15 30 30 Max . 20 40 40 90...