(ML7xx16) LASER DIODES 2.5Gbps InGaAsP DFB LASER DIODE
MITSUBISHI LASER DIODES
ML7xx16 SERIES
2.5Gbps InGaAsP DFB LASER DIODE
TYPE NAME
ML725B16F/ML720J16S/ML725J16F
FEATUR...
Description
MITSUBISHI LASER DIODES
ML7xx16 SERIES
2.5Gbps InGaAsP DFB LASER DIODE
TYPE NAME
ML725B16F/ML720J16S/ML725J16F
FEATURES
λ/4 phase shifted grating structure Wide temperature range operation (-20ºC to 85ºC ) High side-mode-suppression-ratio (typical 45dB) High resonance frequency (typical 11GHz)
DESCRIPTION
ML7xx16 series are uncooled DFB (Distributed Feedback) laser diodes for 2.5Gbps transmission emitting light beam at 1310nm. λ/4 shifted grating structure is employed to obtain excellent SMSR performance under 2.5Gbps modulation. Furthermore, ML7xx16 can operate in the wide temperature range form -20ºC to 85ºC without any temperature control.
APPLICATION ABSOLUTE MAXIMUM RATINGS
Symbol Po IF VRL
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2.5Gbps transmission Conditions CW Ratings 6 200 2 2 20 -20 ~+85 -40 ~+100 Unit mW mA V mA V ºC ºC
Parameter Output power Laser forward current Laser reverse voltage PD forward current PD reverse voltage Operation temperature Storage temperature
IRD VRD Tc Tstg
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC)
Symbol Ith Iop Vop η λp SMSR θ// θ⊥ fr tr,tf Im Id Ct
Parameter Threshold current Operation current Operating voltage Slope efficiency Peak wavelength Side mode suppression ratio Beam divergence angle (parallel) Resonance frequency Rise and fall time(10%-90%) Monitoring current (PD) Dark current (PD) Capacitance (PD) CW CW,Tc=85ºC CW,Po=5mW CW,Po=5mW,Tc=85ºC CW,Po=5mW CW,Po=5mW CW,Po=5mW,Tc=-20ºC~+85ºC CW,Po=5mW,Tc=-20ºC~+85ºC CW,Po=5mW Conditions Limits ...
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