MGFS52BN2122A

< L/S band internally matched power GaAs FET > MGFS52BN2122A 2.1 – 2.2 GHz BAND / 160W DESCRIPTION The MGFS52BN2122A is a 160W push-pull type GaAs power FET especially designed for use in 2.1 – 2.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Push-pull configuration  High output power Pout=160W (TYP.) @f=2.17GHz  High power gain GLP=12.0dB (TYP.) @f=2.17GHz  High power added efficiency P.A.E.=48% (TYP.) @f=2.17GHz APPLICATION  2.1-2.2GHz band power amplifier for W-CDMA Base Station QUALITY  IG OUTLINE RECOMMENDED BIAS CONDITIONS  VDS=12V  ID=4.0A  RG=5ohm for each gate Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO Gate to drain breakdown voltage -20 VGSO Gate to source breakdown voltage -10 PT *1 Total power dissipation 187.5 Tch Cannel temperature 175 Tstg Storage temperature *1 : Tc=25C -65 to +175 Unit V V W C C Keep Safety first in your circuit desi...