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IRF7329

International Rectifier
Part Number IRF7329
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Jul 10, 2007
Detailed Description PD- 94095A HEXFET® Power MOSFET l l l l l IRF7329 ID ±9.2A ±7.4A ±4.6A Trench Technology Ultra Low On-Resistance Dual...
Datasheet PDF File IRF7329 PDF File

IRF7329
IRF7329

Overview
PD- 94095A HEXFET® Power MOSFET l l l l l IRF7329 ID ±9.
2A ±7.
4A ±4.
6A Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.
8mm) Available in Tape & Reel VDSS -12V RDS(on) max (mW) 17@VGS = -4.
5V 21@VGS = -2.
5V 30@VGS = -1.
8V New P-Channel HEXFET Ò power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Description S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 6 5 www.
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