PD - 93763
IRF7326D2
FETKY™ MOSFET / Schottky Diode
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Co-packaged HEXFET® Power MOSFET and Schottky Diode Id...
PD - 93763
IRF7326D2
FETKY™ MOSFET /
Schottky Diode
q q q q q q
Co-packaged HEXFET® Power MOSFET and
Schottky Diode Ideal For Buck
Regulator Applications P-Channel HEXFET Low VF
Schottky Rectifier Generation 5 Technology SO-8 Footprint
A A S G
1
8 7
K K D D
VDSS = -30V RDS(on) = 0.10Ω
Schottky Vf = 0.52V
2
3
6
4
5
Top Vie w
Description
The FETKY family of co-packaged MOSFETs and
Schottky diodes offers the designer an innovative, board space saving solution for switching
regulator and power management applications. Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop
Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
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S O -8
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS dv/dt TJ, TSTG Continuous Drain Current Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Maximum
-3.6 -2.9 -29 2.0 1.3 16 ± 20 -5.0 -55 to +150
Units
A
W mW/°C V V/ns ...