AO6419

AO6419 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6419 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO6419 is Pb-free (meets ROHS & Sony 259 specifications). AO6419L is a Green Product ordering option. AO6419 and AO6419L are electrically identical. Features VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.5V) RDS(ON) < 110mΩ (VGS = -3.5V) D TSOP6 Top View www.DataSheet4U.com D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±20 -5 -4.2 -20 2 1.4 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 47.5 74 37 Max 62.5 110 50 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. AO6419 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current ...