Rev 2: Nov 2004
AO6409, AO6409L ( Green Product ) P-Channel Enhancement Mode Field Effect Transistor
General Descriptio...
Rev 2: Nov 2004
AO6409, AO6409L ( Green Product ) P-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO6409L ( Green Product ) is offered in a lead-free package.
Features
VDS (V) = -20V ID = -5 A RDS(ON) < 45mΩ (VGS = -4.5V) RDS(ON) < 56mΩ (VGS = -2.5V) RDS(ON) < 75mΩ (VGS = -1.8V) ESD Rating: 3000V HBM
TSOP6 Top View D D G 1 6 2 5 3 4 D D S G
D
www.DataSheet4U.com
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -20 ±8 -5.0 -4.2 -30 2 1.28 -55 to 150
Units V V A
TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 47.5 74 37
Max 62.5 110 50
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO6409, AO6409L
Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250 µA, VGS=0V VDS=-16V, VGS=0V TJ=55°C VDS=0V, VGS=±4.5V VDS=0V, VGS=±8V VDS=VGS ID=-250 µA VGS=-4.5V, V DS=-5V VGS=-4.5V, I D=-5A RDS(ON) Static...