Rev 3:Nov 2004
AO6402, AO6402L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor
General Description...
Rev 3:Nov 2004
AO6402, AO6402L ( Green Product ) N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. AO6402L ( Green Product ) is offered in a lead-free package.
Features
VDS (V) = 30V ID = 6.9A RDS(ON) < 28m Ω (VGS = 10V) RDS(ON) < 42m Ω (VGS = 4.5V)
TSOP-6 Top View
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D
D D G
1 6 2 5 3 4
D D S
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Maximum 30 ±20 6.9 5.8 20 2 1.44 -55 to 150
Units V V A
VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG
W °C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL
Typ 48 74 35
Max 62.5 110 40
Units °C/W °C/W °C/W
Alpha & Omega Semiconductor, Ltd.
AO6402, AO6402L
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V, ID=6.9A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5.0A Forward Transconductance VDS=5V, ID=6.9A 10 Diode Forward Voltage IS=1A Maximum Body-Diode Continuous C...
