MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM3742-25UL
TECHNICAL DATA FEATURES
n HIGH POWER P1dB=44.5dBm at 3.7...
Description
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TIM3742-25UL
TECHNICAL DATA FEATURES
n HIGH POWER P1dB=44.5dBm at 3.7GHz to 4.2GHz n HIGH GAIN G1dB=10.5dB at 3.7GHz to 4.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion
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SYMBOL P1dB G1dB IDS1 ∆G
CONDITIONS
UNIT dBm dB A dB %
MIN. 43.5 9.5 -44
TYP. MAX. 44.5 10.5 6.8 38 -47 6.8 7.6 ±0.6 7.6 80
VDS= 10V
f = 3.7 to 4.2GHz
ηadd
IM3 IDS2 ∆Tch Two-Tone Test Po=33.5dBm
(Single Carrier Level)
(VDS X IDS + Pin – P1dB) X Rth(c-c)
dBc A °C
Drain Current Channel Temperature Rise
Recommended gate resistance(Rg) : Rg= 28 Ω(MAX.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL
gm
VGSoff IDSS VGSO Rth(c-c)
CONDITIONS VDS= 3V IDS= 8.0A VDS= 3V IDS= 80mA VDS= 3V VGS= 0V IGS= -280µA Channel to Case
UNIT mS V A V °C/W
MIN. -1.0 -5
TYP. 5000 -2.5 14.4 1.2
MAX. -4.0 1.5
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