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TGA4514-EPU

TriQuint Semiconductor

Ka Band 2W Power Amplifier

Advance Product Information April 28, 2003 Ka Band 2W Power Amplifier Key Features • • • • • • • • TGA4514-EPU Typical...


TriQuint Semiconductor

TGA4514-EPU

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Advance Product Information April 28, 2003 Ka Band 2W Power Amplifier Key Features TGA4514-EPU Typical Frequency Range: 31 - 35 GHz 33.5 dBm Nominal Psat @ Vd = 7V 31.5 dBm Nominal P1dB IMD3: 31dBc at Pout/tone=22dBm 19 dB Nominal Gain Bias 6 - 7 V, 1150 mA 0.25 um 2MI pHEMT Technology Chip Dimensions 4.0 x 3.2 x 0.1 mm (0.161 x 0.128 x 0.004) in Preliminary Measured Data 30 Gain & Return Loss (dB ) 20 10 0 -10 -20 -30 28 29 30 31 32 33 34 35 36 37 38 Frequency (GHz) Bias Conditions: Vd = 6 V, Id = 1150 mA Primary Applications Point-to-Point Radio Military Radar Systems Ka Band Sat-Com GAIN ORL www.DataSheet4U.com IRL 35 Psat @ Pin= 20dBm (dBm) 34 33 32 31 30 29 28 30 Bias Conditions: Vd = 6/7 V, Id = 1150 mA Vd = 7 V Vd = 6 V 31 32 33 34 35 Frequency (GHz) 36 37 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information April 28, 2003 TGA4514-EPU TABLE I MAXIMUM RATINGS 1/ SYMBOL Vd Vg Id ½Ig½ PIN PD T CH TM TSTG 1/ 2/ 3/ 4/ 5/ Drain Voltage Gate Voltage Range Drain Current Gate Current Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature PARAMETER VALUE 8V -5 TO 0 V 2.5 A 70 mA 27 dBm TBD 150 C 320...




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