TGA4510-EPU

Advance Product Information August 5, 2002 29-37 GHz Compact Driver Amplifier Key Features TGA4510-EPU 0.25 um pHEMT Technology >16 dB Nominal Gain @ 30 GHz 16 dBm Nominal Psat Bias Conditions: Vd = 6V, Id = 60 mA Compact Chip Size: 1.1 x 0.8 x 0.1 mm3 Primary Applications LMDS Point-to-Point Base Stations Fixtured Measured Performance Bias Conditions: Vd = 6V, Id = 60 mA ± 5% 20 18 16 www.DataSheet4U.com 14 12 10 8 6 4 2 0 26 28 30 32 34 Frequency (GHz) 36 38 40 Gain (dB) 20 18 16 14 Pout (dBm) 12 10 8 6 4 2 0 26 28 30 , Pwr(in) 4 2 0 -2 -4 -6 -8 -10 32 34 Frequency (GHz) 36 38 40 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information TABLE I MAXIMUM RATINGS 1/ Symbol Parameter + V Positive Supply Voltage + I Positive Supply Current (Quiescent) |IG| Gate Current PD Power Dissipation PIN Input Continuous Wave Power TCH Operating Channel Temperature TM Mounting Temperature (30 seconds) TSTG Storage Temperature 1/ 2/ 3/ 4/ Value 8V 81mA 3.5 mA TBD 18 dBm 150 °C 320 °C -65 °C to 150 °C August 5, 2002 TGA4510-EPU Notes 2/ 3/, 4/ These values represent the maximum operable values of this device Total current for the entire MMIC These ratings apply to each individual FET Junction op...