1W Power Amplifier
Advance Product Information
Jan 17, 2005
27 - 31 GHz 1W Power Amplifier
Key Features
• • • • • • • •
TGA4509-EPU
22 d...
Description
Advance Product Information
Jan 17, 2005
27 - 31 GHz 1W Power Amplifier
Key Features
TGA4509-EPU
22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss Built-in Power Detector 0.25-µm mmW pHEMT 3MI Bias Conditions: Vd = 4 - 6 V, Idq = 420 mA Chip Dimensions 2.44 mm x 1.15 mm x 0.1 mm (0.096 x 0.045 x 0.004 in)
Primary Applications
Point to Point Radio Point to Multi-point Radio LMDS Satellite Ground Terminal
www.DataSheet4U.com
Fixtured Measured Performance
30 25 20 15 10
S 21
Bias Conditions: Vd = 6 V, Id =420 mA
Sij (dB)
5 0 -5 -1 0 -1 5 -2 0 -2 5 -3 0 25
32 30 1000
S22 S 11
26
27
28
29
30
31
32
33
34
F re q u e n c y (G H z )
Pout (dBm) & Gain (dB)
28 26 24 22 20 18 16 14 12 10 -12 -9 -6 -3 0 3 6 9 12 15 18 21 0 800
600
Gain
400
IDS
200
Pin (dBm )
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
IDS (mA)
Data taken @ 30 GHz
Pout
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
1
Advance Product Information
Jan 17, 2005 TGA4509-EPU
TABLE I MAXIMUM RATINGS 1/ Symbol + V V |Ig| + I PD PIN TCH TM TSTG 1/ 2/ 3/ 4/ Parameter Positive Supply Voltage Negative Supply Voltage Range Gate Current Positive Supply Current Power Dissipation Input Continuous Wave Power Operating Channel Temperature Mou...
Similar Datasheet