TC1102

TRANSCOM TC1102 January 2002 Super Low Noise GaAs FETs FEATURES Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 13 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability 100 % DC Tested PHOTO ENLARGEMENT DESCRIPTION The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure and high associated gain. The device can be used in circuits up to 40 GHz and suitable for low noise application including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding. ELECTRICAL SPECIFICATIONS (TA=25 °C) Symbol NF Ga IDSS gm VP BVDGO Rth CONDITIONS Noise Figure at VDS = 2 V, IDS = 10 mA,, f = 12GHz Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 0.32 mA Drain-Gate Breakdown Voltage at IDGO =0.08 mA Thermal Resistance MIN 11 TYP 0.5 13 40 55 -1.0 8 90 MAX 0.7 UNIT dB dB mA mS Volts Volts °C/W 5 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 9 TC1102 ABSOLUTE MAXIMUM RATINGS (TA=25 °C) Symbol VDS VGS IDS IGS Pin PT TCH TSTG Parameter Drain-So...