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NE5511279A

NEC

7.5 V UHF BAND RF POWER SILICON LD-MOS FET

Description
NEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET FEATURES HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, Pout = 40.5 dBm TYP., f = 460 MHz, VDS = 7.5 V, HIGH POWER ADDED EFFICIENCY: ηadd = 48% TYP., f = 900 MHz, VDS = 7.5 V, 5.7 MAX. 0.6±0.15 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A (Bottom View) 4.2 MAX. Sourc...


NEC

NE5511279A

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