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NE5510279A

NEC
Part Number NE5510279A
Manufacturer NEC
Description 3.5V OPERATION SILICON RF POWER MOSFET
Published Jul 9, 2007
Detailed Description 3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 NE5510279A TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 32 ...
Datasheet PDF File NE5510279A PDF File

NE5510279A
NE5510279A

Overview
3.
5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 NE5510279A TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 32 dBm TYP at VDS = 3.
5 V, IDQ = 400 mA, f = 1.
8 GHz, PIN = 25 dBm • HIGH POWER ADDED EFFICIENCY: 45% TYP at VDS = 3.
5 V, IDQ = 400 mA, f = 1.
8 GHz, PIN = 25 dBm • HIGH LINEAR GAIN: 10 dB TYP at VDS = 3.
5 V, IDQ = 400 mA, f = 1.
8 GHz, PIN = 10 dBm • SURFACE MOUNT PACKAGE: 5.
7 x 5.
7 x 1.
1 mm MAX • SINGLE SUPPLY: 2.
8 to 6.
0 V 0.
9 ± 0.
2 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 79A 4.
2 Max 1.
5 ± 0.
2 Source Source Gate 5.
7 Max 0.
6 ± 0.
15 Drain 0.
8 ± 0.
15 4.
4 Max Gate 1.
0 Max Drain 1.
2 Max 0.
8 Max 3.
6 ± 0.
2 0.
4 ± 0.
15 5.
7 Max 0.
2 ± 0.
1 Bottom View DESCRIPTION The NE...


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