HBN2411S6R

CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistors Spec. No. : C203S6R Issued Date : 2003.09.12 Revised Date : 2005.03.30 Page No. : 1/ 5 (dual transistors) HBN2411S6R Features Two BTC2411chips in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference. Mounting cost and area can be cut in half. High IC(Max) . IC (Max) = 0.6A Low VCE(sat) , TYP. VCE(sat) = 0.2V at IC/IB = 500mA/50mA Optimal for low Voltage operation Complementary to HBP1036S6R Equivalent Circuit HBN2411S6R Outline SOT-363R Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : 150mW per element must not be exceeded. HBN2411S6R CYStek Product Specification Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 60 40 6 0.6 200(total) (Note) 150 -55~+150 Unit V V V A mW °C °C CYStech Electronics Corp. Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICEX *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) 1 *VBE(sat) 2 hFE 1 hFE 2 *hFE 3 *hFE 4 *hFE 5 fT Cob Min. 60 40 6 20 40 80 82 40 Typ. 0.2 250 6 Max. 100 0.4 0.75 0.95 1.2 390 Unit V V V nA V V V V Spec. No. : C203S6R Issued Date : 2003.09.12 Revised Date : 2005.03.30 Page No. : 2/ 5 MHz pF Test Conditions IC=100µA IC=1mA IE=10µA VCE=35V, VEB=0.4...