Low VF Schottky Bridge Rectifiers
CDBHD140L-G Thru. CDBHD1100L-G
Reverse Voltage: 40 to 100 Volts Forward Current: 1.0 ...
Low VF
Schottky Bridge Rectifiers
CDBHD140L-G Thru. CDBHD1100L-G
Reverse Voltage: 40 to 100 Volts Forward Current: 1.0 Amp RoHS Device
Features
-
Schottky barrier chips in TO-269AA bridge. - Metal semiconductor junction with guard ring. - Silicon epitaxial planar chips. - Very low forward drop down voltage. - For use in low voltage, high efficiency inverters, free
wheeling, and polarity protection applications.
Mechanical data
- Case: Molded plastic, TO-269AA(MDS) - Epoxy: UL94-V0 rated flame retardant - Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026 - Polarity: Marked on body - Mounting Position: Any - Weight: 0.13 grams(approx.).
TO-269AA(MDS)
0.165(4.20) 0.142(3.60)
0.031(0.80) 0.020(0.50)
0.008(0.20)MAX
0.276(7.00) MAX
0.043(1.10) 0.028(0.70)
0.193(4.90) 0.177(4.50)
0.106(2.70) 0.091(2.30)
0.106(2.70) 0.091(2.30)
Dimensions in inches and (millimeters)
Circuit diagram
Maximum Ratings and Electrical Characteristics
Parameter
Repetitive peak reverse voltage
Conditions
Symbol VRRM
CDBHD 140L-G
40
Continuous reverse voltage
VR 40
CDBHD 160L-G
60
60
CDBHD 1100L-G
100
100
RMS voltage
VRMS
28
42
70
8.3ms single half Peak forward surge current sine-wave
(JEDEC method)
IFSM
30
Average forward rectified current Forward voltage
Reverse current
Typ. thermal resistance
Typ. Diode junction capacitance
0.2x0.2”(5.0x5.0mm) copper pad, See fig.1
Per element at 1.0A peak
VR=VRRM, TJ=25°C
VR=VRRM, TJ=100°C
Junction to ambient Junction to lead
f=...
