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CDBF0145

Comchip Technology

SMD Schottky Barrier Diode

SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist CDBF0145 Io = 100 mA V R = 45 Volt s Features (Lead-free Dev...


Comchip Technology

CDBF0145

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Description
SMD Schottky Barrier Diode COMCHIP SMD Diodes Specialist CDBF0145 Io = 100 mA V R = 45 Volt s Features (Lead-free Device) Designed for mounting on small surface. Extremely thin/leadless package. Low leakage current (IR =0.1uA typ. @V R =10V). Majority carrier conduction. 0.051(1.30) 0.043(1.10) 1005(2512) 0.102(2.60) 0.095(2.40) Mechanical data Case: 1005 (2512) Standard package , molded plastic. 0.020(0.50) Typ. 0.035(0.90) 0.027(0.70) Terminals: Gold plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. Mounting position: Any. Weight: 0.006 gram (approximately). 0.020(0.50) Typ. 0.012 (0.30) Typ. Dimensions in inches and (millimeter) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current , surge peak Power Dissipation Storage temperature Junction temperature 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Conditions Symbol Min Typ Max Unit V RRM VR Io I FSM PD T STG Tj -40 -40 1000 250 +125 +125 50 45 100 V V mA mA mW C C Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Parameter Forward voltage Reverse current Capacitance between terminals V R = 10 V f = 1MHz, and 10 VDC reverse voltage Conditions I F = 100 mA DC Symbol Min Typ Max Unit VF IR CT 9 0.55 1 V uA pF REV:A QW-A1020 Page 1 SMD Schottky Barrier Diode RATING AND CHARACTERISTIC CURVES (CDBF0145) Fig. 1 - Forward characteristic...




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