RF LDMOS Wideband Integrated Power Amplifiers
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Freescale Semiconductor Technical Data
RF LDMOS Wideband Integrated Power Ampli...
Description
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Freescale Semiconductor Technical Data
RF LDMOS Wideband Integrated Power Amplifiers
The MWE6IC9100N wideband integrated circuit is designed with on--chip
matching that makes it usable from 869 to 960 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulations.
Final Application
Typical GSM Performance: VDD = 26 Volts, IDQ1 = 120 mA, IDQ2 = 950 mA, Pout = 100 Watts CW, f = 960 MHz Power Gain — 33.5 dB Power Added Efficiency — 54%
GSM EDGE Application
Typical GSM EDGE Performance:
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50 Watts Avg., — 35.5 dB
Full
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Power Added Efficiency — 39%
Spectral Regrowth @ 400 kHz Offset = --63 dBc
Spectral Regrowth @ 600 kHz Offset = --81 dBc
EVM — 2% rms
Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 120 W CW Pout.
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters
On--Chip Matching (50 Ohm Input, DC Blocked) Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
Integrated ESD Protection 225°C Capable Plastic Package RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MWE6IC9100N Rev. 3, 12/2008
MWE6IC9100NR1 MWE6IC...
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