APTM50HM75STG

APTM50HM75STG Full bridge Series & parallel diodes MOSFET Power Module VB US CR1A CR3A VDSS = 500V RDSon = 75mΩ typ @ Tj = 25°C ID = 46A @ Tc = 25°C Application Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Q1 CR1B CR3B Q3 G1 S1 CR2A O UT1 O UT2 CR4A G3 S3 Q2 CR2B CR4B Q4 G2 S2 NTC1 0/V BUS NTC2 G4 S4 www.DataSheet4U.com Features Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS compliant G3 S3 G4 S4 OUT2 VBUS 0/VB US OUT1 S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Foll...