Document
APTM120TA57FP
Triple phase leg MOSFET Power Module
VBUS1 VBUS2 VBUS3
VDSS = 1200V RDSon = 570mΩ max @ Tj = 25°C ID = 17A @ Tc = 25°C
Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control
G1
G3
G5
S1 U
S3 V
S5 W
G2
G4
G6
S2 0/VBUS1
S4 0/VBUS2
S6 0/VBUS3
Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a phase leg of three times the current capability • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge Max ratings 1200 17 13 68 ±30 570 390 22 50 3000 Unit V
APTM120TA57FP– Rev 0 September, 2004
www.DataSheet4U.com
VBUS 1
VBUS 2
VBUS 3
G1 0/VBUS 1 S1 S2 G2 0/VBUS 2
G3 S3 S4 G4 0/VBUS 3
G5 S5 S6 G6
U
V
W
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C
A V mΩ W A mJ
Tc = 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM120TA57FP
All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics
Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 250µA Min 1200
VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25°C T j = 125°C
Typ
Max 100 500 570 5 ±100
Unit V µA mΩ V nA
VGS = 10V, ID = 8.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy X Turn-off Switching Energy Y Turn-on Switching Energy X Turn-off Switching Energy Y
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 17A Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 17A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 17A, R G = 5 Ω .