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APTM120TA57FP Dataheets PDF



Part Number APTM120TA57FP
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description MOSFET Power Module
Datasheet APTM120TA57FP DatasheetAPTM120TA57FP Datasheet (PDF)

APTM120TA57FP Triple phase leg MOSFET Power Module VBUS1 VBUS2 VBUS3 VDSS = 1200V RDSon = 570mΩ max @ Tj = 25°C ID = 17A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control G1 G3 G5 S1 U S3 V S5 W G2 G4 G6 S2 0/VBUS1 S4 0/VBUS2 S6 0/VBUS3 Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelv.

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APTM120TA57FP Triple phase leg MOSFET Power Module VBUS1 VBUS2 VBUS3 VDSS = 1200V RDSon = 570mΩ max @ Tj = 25°C ID = 17A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control G1 G3 G5 S1 U S3 V S5 W G2 G4 G6 S2 0/VBUS1 S4 0/VBUS2 S6 0/VBUS3 Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Very low (12mm) profile • Each leg can be easily paralleled to achieve a phase leg of three times the current capability • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge Max ratings 1200 17 13 68 ±30 570 390 22 50 3000 Unit V APTM120TA57FP– Rev 0 September, 2004 www.DataSheet4U.com VBUS 1 VBUS 2 VBUS 3 G1 0/VBUS 1 S1 S2 G2 0/VBUS 2 G3 S3 S4 G4 0/VBUS 3 G5 S5 S6 G6 U V W Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C A V mΩ W A mJ Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM120TA57FP All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V, ID = 250µA Min 1200 VGS = 0V,VDS = 1200V VGS = 0V,VDS = 1000V T j = 25°C T j = 125°C Typ Max 100 500 570 5 ±100 Unit V µA mΩ V nA VGS = 10V, ID = 8.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V 3 Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy X Turn-off Switching Energy Y Turn-on Switching Energy X Turn-off Switching Energy Y Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 600V ID = 17A Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 17A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 17A, R G = 5 Ω .


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