APTM10UM01FA

APTM10UM01FA Single Switch MOSFET Power Module SK S D VDSS = 100V RDSon = 1.5mΩ typ @ Tj = 25°C ID = 860A* @ Tc = 25°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Fast intrinsic diode - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration AlN substrate for improved thermal performance Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile G DK www.DataSheet4U.com DK S D SK G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ * Specification of MOSFET device but output current must be limited to 500A to not exceed a delta of temperature greater than 100°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTM10UM01FA– Rev 0 May, 2005 ...