APTM10TDUM09P

APTM10TDUM09P Triple dual common source VDSS = 100V RDSon = 9mΩ max @ Tj = 25°C ID = 139A @ Tc = 25°C Application AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies S5/S6 MOSFET Power Module D1 D3 D5 G1 G3 G5 S1 S1/S2 S3 S3/S4 S5 S2 G2 S4 G4 S6 G6 D2 D4 D6 Features Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Very low (12mm) profile Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability Max ratings 100 139 100 430 ±30 9 390 100 50 3000 Unit V A September, 2004 1–6 APTM10TDUM09P – Rev 0 www.DataSheet4U.com D1 D3 D5 G1 S1/S2 S1 S2 G2 S3/S4 G3 S3 S4 G4 S5/S6 G5 S5 S6 G6 D2 D4 D6 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 2...