MOSFET Power Module
APTM10HM09FT3G
Full - Bridge MOSFET Power Module
13 14 Q1 Q3
VDSS = 100V RDSon = 9mΩ typ @ Tj = 25°C ID = 139A @ Tc = 2...
Description
APTM10HM09FT3G
Full - Bridge MOSFET Power Module
13 14 Q1 Q3
VDSS = 100V RDSon = 9mΩ typ @ Tj = 25°C ID = 139A @ Tc = 25°C
Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS compliant
18 22 19 Q2 23 8 Q4 7
11
10
26
4 3 29 15 30 31 R1 32 16
27
28 27 26 25
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23 22
20 19 18 16 15
29 30
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
Symbol VDSS
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM10HM09FT 3G– Rev 1
Max ratings Unit 100 V Tc = 25°C 139 ID Continuous Drain Current A Tc = 80°C 100 * IDM Pulsed Drain current 430 VGS Gate - Source Volt...
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