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APTM10HM09FT3G

Advanced Power Technology

MOSFET Power Module

APTM10HM09FT3G Full - Bridge MOSFET Power Module 13 14 Q1 Q3 VDSS = 100V RDSon = 9mΩ typ @ Tj = 25°C ID = 139A @ Tc = 2...


Advanced Power Technology

APTM10HM09FT3G

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Description
APTM10HM09FT3G Full - Bridge MOSFET Power Module 13 14 Q1 Q3 VDSS = 100V RDSon = 9mΩ typ @ Tj = 25°C ID = 139A @ Tc = 25°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile Each leg can be easily paralleled to achieve a phase leg of twice the current capability RoHS compliant 18 22 19 Q2 23 8 Q4 7 11 10 26 4 3 29 15 30 31 R1 32 16 27 28 27 26 25 www.DataSheet4U.com 23 22 20 19 18 16 15 29 30 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM10HM09FT 3G– Rev 1 Max ratings Unit 100 V Tc = 25°C 139 ID Continuous Drain Current A Tc = 80°C 100 * IDM Pulsed Drain current 430 VGS Gate - Source Volt...




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