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APTM10DDAM09T3 Dataheets PDF



Part Number APTM10DDAM09T3
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description MOSFET Power Module
Datasheet APTM10DDAM09T3 DatasheetAPTM10DDAM09T3 Datasheet (PDF)

APTM10DDAM09T3 Dual Boost chopper MOSFET Power Module 13 14 VDSS = 100V RDSon = 9mΩ typ @ Tj = 25°C ID = 139A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance Symmetrical design • Internal thermistor for temperature monitoring • High level of int.

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APTM10DDAM09T3 Dual Boost chopper MOSFET Power Module 13 14 VDSS = 100V RDSon = 9mΩ typ @ Tj = 25°C ID = 139A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance Symmetrical design • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a single boost of twice the current capability CR1 22 7 CR2 23 Q1 26 8 Q2 4 27 29 15 30 31 R1 32 16 3 28 27 26 25 www.DataSheet4U.com 23 22 20 19 18 16 15 29 30 31 32 2 3 4 7 8 10 11 12 14 13 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings Symbol VDSS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM10DDAM09T3 – Rev 0 Max ratings Unit 100 V Tc = 25°C 139 ID Continuous Drain Current A Tc = 80°C 100 * IDM Pulsed Drain current 430 VGS Gate - Source Voltage ±30 V RDSon Drain - Source ON Resistance 9.5 mΩ PD Maximum Power Dissipation Tc = 25°C 390 W IAR Avalanche current (repetitive and non repetitive) 100 A EAR Repetitive Avalanche Energy 50 mJ EAS Single Pulse Avalanche Energy 3000 * Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature greater than 30°C for the connectors. Parameter Drain - Source Breakdown Voltage May, 2005 APTM10DDAM09T3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V Min Tj = 25°C Tj = 125°C Typ VGS = 10V, ID = 69.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V 9 2 Max 100 500 9.5 4 ±100 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy X Turn-off Switching Energy Y Turn-on Switching Energy X Turn-off Switching Energy Y Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 50V ID =139A Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 139A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 139A, R G = 5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 139A, R G = 5 Ω Min Typ 9875 3940 1470 350 60 180 35 70 95 125 552 604 608 641 Max Unit pF nC ns µJ µJ X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Chopper diode ratings and characteristics Symbol Characteristic VRRM IRM IF(A V) VF trr Qrr Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25°C Tj = 125°C Tc = 80°C Min 200 Typ Max 250 500 Unit V µA A V ns nC May, 2005 2–6 APTM10DDAM09T3 – Rev 0 Maximum Reverse Leakage Current Maximum Average Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VR=200V 50% duty cycle IF = 100A IF = 200A IF = 100A IF = 100A VR = 133V di/dt =200A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 100 1 1.4 0.9 60 110 200 840 APT website – http://www.advancedpower.com APTM10DDAM09T3 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 1.5 Min Typ Max 0.32 0.55 150 125 100 4.7 110 Unit °C/W V °C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M4 Temperature sensor NTC (for more information see application note APT0406 on www.advancedpower.com). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit kΩ K RT = R 25   1 1  RT : Thermistor value at T exp B 25 / 85   T − T    25  T: Thermistor temperature Package outline (dimensions in mm) 1 12 APT website – http://www.advancedpower.com 3–6 APTM10DDAM09T3 – Rev 0 May, 2005 17 28 APTM10DDAM09T3 Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (°C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 Single Pulse 0.9 0.7 0.5 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (S.


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