APTM100UM65D-ALN

APTM100UM65D-AlN Single switch with Series diode MOSFET Power Module VDSS = 1000V RDSon = 65mΩ max @ Tj = 25°C ID = 145A @ Tc = 25°C Application Zero Current Switching resonant mode www.DataSheet4U.com Features Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration AlN substrate for improved thermal performance S D SK G Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM100UM65D-AlN – Rev 0 July, 2004 Max ratings 1000 145 110 580 ±30 65 3250 30 50 3200 Unit V A V mΩ W A APTM100UM65D-AlN All ratings @ Tj = 25°C unless otherwise specified Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zer...