MOSFET Power Module
APTM100TDU35P
Triple dual common source
VDSS = 1000V RDSon = 350mΩ max @ Tj = 25°C ID = 22A @ Tc = 25°C
Application • AC...
Description
APTM100TDU35P
Triple dual common source
VDSS = 1000V RDSon = 350mΩ max @ Tj = 25°C ID = 22A @ Tc = 25°C
Application AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies
S5/S6
MOSFET Power Module
D1 D3 D5
G1
G3
G5
S1 S1/S2
S3 S3/S4
S5
S2 G2
S4 G4
S6 G6
D2
D4
D6
Features Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Benefits Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Very low (12mm) profile Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability
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D1
D3
D5
G1 S1/S2 S1 S2 G2 S3/S4
G3 S3 S4 G4 S5/S6
G5 S5 S6 G6
D2
D4
D6
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C
Tc = 25°C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Han...
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