APTM100H18F

APTM100H18F Full - Bridge MOSFET Power Module VB US Q1 Q3 VDSS = 1000V RDSon = 180mΩ max @ Tj = 25°C ID = 43A @ Tc = 25°C Application Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control G1 OUT1 OUT2 G3 S1 Q2 S3 Q4 Features Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration G2 G4 S2 0/VBUS S4 www.DataSheet4U.com OUT1 G1 S1 VBUS 0/VBUS G2 S2 Benefits S3 G3 OUT2 S4 G4 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM100H18F– Rev 0 Max ratings 1000 43 33 172 ±30 180 780 25 50 3000 Unit V A V mΩ W A mJ July, 2004 APTM100H18F All ratings @ Tj = 25°C ...