DatasheetsPDF.com

APTM100A18FTG Dataheets PDF



Part Number APTM100A18FTG
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description MOSFET Power Module
Datasheet APTM100A18FTG DatasheetAPTM100A18FTG Datasheet (PDF)

APTM100A18FTG Phase leg MOSFET Power Module VBUS Q1 NT C2 VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 43A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames fo.

  APTM100A18FTG   APTM100A18FTG



Document
APTM100A18FTG Phase leg MOSFET Power Module VBUS Q1 NT C2 VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 43A @ Tc = 25°C Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS compliant Max ratings 1000 43 33 172 ±30 216 780 25 50 3000 Unit V A November, 2005 1–6 APTM100A18FTG– Rev 1 G1 S1 OUT Q2 G2 S2 0/VBUS NT C1 www.DataSheet4U.com G2 S2 OUT VB US 0/VBUS OUT S1 G1 S2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Tc = 80°C Tc = 25°C V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com APTM100A18FTG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 1000V VGS = 0V,VDS = 800V T j = 25°C T j = 125°C Min Typ VGS = 10V, ID = 21.5A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V 180 3 Max 500 2000 216 5 ±150 Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Source Charge Gate – Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 500V ID = 43A Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 43A R G = 2.5Ω Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5 Ω Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 43A, R G = 2.5 Ω Min Typ 10.4 1.76 0.32 372 48 244 18 12 155 40 1800 1246 2846 1558 Max Unit nF nC ns µJ µJ Source - Drain diode ratings and characteristics Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X Reverse Recovery Time Reverse Recovery Charge Test Conditions Tc = 25°C Tc = 80°C Min Typ VGS = 0V, IS = - 43A Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 7.2 19.5 µC APT website – http://www.advancedpower.com 2–6 APTM100A18FTG– Rev 1 X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 43A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C November, 2005 IS = - 43A VR = 500V diS/dt = 200A/µs Max 43 33 1.3 18 320 650 Unit A V V/ns ns APTM100A18FTG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Min 2500 -40 -40 -40 1.5 Typ Max 0.16 150 125 100 4.7 160 Unit °C/W V °C N.m g Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Min Typ 50 3952 Max Unit kΩ K RT = R 25   1 1  RT : Thermistor value at T exp B 25 / 85   T − T    25  T: Thermistor temperature SP4 Package outline (dimensions in mm) APT website – http://www.advancedpower.com 3–6 APTM100A18FTG– Rev 1 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : November, 2005 APTM100A18FTG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (°C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.9 0 0.00001 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 120 VGS =15, 10&8V Transfert Characteristics 160 140 I D, Drain Current (A) 120 100 80 60 40 20 0 30 0 1 2 3 4 5 T J=25°C T J=125°C VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle I D, Drain Current (A) 100 80.


APTM100A13D APTM100A18FTG APTM100AM90F


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)